Lead Analog IC Design Engineer — GaN Power Stage

Texas Instruments · India

About Texas Instruments

At TI, we engineer the future — one silicon innovation at a time. Our power management portfolio powers everything from electric vehicles to data centers, and now we're doubling down on Gallium Nitride (GaN) — the technology redefining what's possible in high-efficiency power conversion.

About the Role

We are assembling an elite team to design next-generation, high-efficiency GaN power stage ICs . As a GaN Power Architect , you will lead the full-stack execution — from silicon architecture to bench validation — of high-speed, high-voltage GaN gate drivers and integrated power stage building blocks .

You will be the critical bridge between advanced GaN semiconductor device physics and precision analog circuit design , driving breakthroughs in switching frequency, power density, and thermal performance.

What You'll Do

⚙️ Analog IC Design

• Architect, design, and simulate custom analog and mixed-signal blocks for GaN power ICs
• Design high-speed gate drivers, level shifters, bootstrap circuits, UVLO, thermal shutdown, and fast overcurrent protection circuits

Silicon-Device Co-Design

• Partner with device physics experts to model and optimize driver-device interaction
• Account for dynamic R_DSon, current collapse, gate-charge (Q_g) characteristics, and 2DEG behavior

⚡ Transient & Parasitic Management

• Engineer robust circuits capable of withstanding extreme dV/dt (>100V/ns) and di/dt transients
• Prevent false turn-on, shoot-through, and gate breakdown with surgical precision

Layout & Co-Extraction

• Collaborate with layout engineers for parasitics-aware design (PEEC/EM extraction)
• Optimize ultra-low inductance driver loops and power interconnects

Silicon Validation

• Lead bench characterization and debug of first-silicon in the lab
• Validate switching dynamics, efficiency curves, protection response times, and thermal boundaries

What You Bring

✅ Education & Experience: B.S., M.S., or Ph.D. in Electrical Engineering (or related) with 5+ years of hands-on analog/mixed-signal IC design experience in high-voltage or wide-bandgap (WBG) power management

✅ Solid Analog Design Fundamentals — the kind that comes from doing, not just studying

✅ GaN Driver Expertise: Proven track record designing high-speed, high-voltage gate drivers for GaN HEMTs (discrete or monolithically integrated)

✅ GaN Device Physics: Deep understanding of V_th stability, gate degradation, Q_rr-equivalent loss mechanisms, dynamic R_DSon, and 2DEG physics

✅ EDA Proficiency: Expert-level use of Cadence Virtuoso, Spectre/Spectre21, Calibre (DRC/LVS/PEX) , and parasitic extraction workflows for high-frequency/high-power layouts

✅ Lab & Debug Skills: Hands-on with high-bandwidth oscilloscopes, differential probes, and double-pulse testing setups

Bonus Points If You Have

⭐ Working knowledge of switching converter topologies — multiphase buck, resonant LLC, boost, or active clamp flyback

⭐ Experience with ultra-low inductance power packaging — QFN, flip-chip, embedded dies, or multi-chip modules

⭐ Exposure to volume GaN manufacturing, DFT, and high-reliability applications

Why TI?

• Work on technology that powers the world's most critical systems
• Access to world-class semiconductor fabrication and R&D resources
• Collaborative culture where engineers lead innovation — not just execute it
• Competitive compensation, benefits, and long-term career growth