Rfic design engineer — high-speed automotive serdes socs (3–10 yrs)
Texas Instruments · Bengaluru, India
Job Description
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company designing, manufacturing, and selling analog and embedded processing chips — powering everything from industrial automation to automotive safety systems worldwide.
About the Team — High Speed Data Interface Product Group
The High Speed Data Interface product group focuses on the development of differentiated high-speed Ser Des So Cs targeted for automotive and industrial markets. There are two primary focus areas — Ethernet PHY and FPD-Link.
Ethernet PHY Group: A large number of applications — like in-vehicle driver alertness monitors, steering, or accelerator control in automotive and robotic applications — require an Ethernet interface. The ubiquity of Ethernet-enabled devices allows customers to simplify connecting large numbers of devices in automotive and robotic environments. Customers expect robust performance in the presence of interference and ESD events, along with processing offload capabilities. The low-cost migration from CAN to Ethernet presents unique challenges requiring interdisciplinary skills with aggressive cost and power targets.
FPD-Link Group: The proprietary FPD-Link interface addresses multi-gigabit (up to 20 Gbps) automotive and industrial sensor and display markets. Constant increase in density of electronic sensing and display content is pushing data rate (>20 Gbps) and BER performance requirements higher. Automotive functional safety requirements demand robust performance at these high data rates under challenging environments while maintaining low power consumption.
The Broader Mission: As part of this product group, you will be engaged in designing solutions spanning Analog, Digital, and Signal Processing domains to mitigate impairments such as high channel loss, ESD strikes, and narrowband interference. The team implements high-performance equalization circuits (CTLE, FFE, DFE), high-speed converters (DAC, ADC), high-speed digital front-ends, signal processing algorithms, embedded microcontrollers, and high-speed interfaces for camera and display systems. The team has successfully achieved several differentiated innovations through collaborative cross-domain optimization.
The entire product lifecycle — from product specification to customer and application support — is owned by the product group in Bangalore, giving each team member tremendous learning opportunity and enhanced scope to influence the global success of the product. We are looking for passionate, creative, and self-driven engineers who challenge traditional techniques and come up with innovative solutions to make a difference.
Role Overview
As an RFIC Design Engineer, you will bring specialized RF and microwave circuit expertise to one of the most demanding application spaces in semiconductors — high-speed automotive Ser Des So Cs. At data rates exceeding 20 Gbps, RF design principles dominate every aspect of the silicon — from transistor-level matching networks to on-chip transmission lines and impedance-controlled interconnects. You will design RF-grade circuits and front-ends that ensure robust, low-noise, low-jitter performance in the electromagnetically hostile automotive environment.
Key Responsibilities
Design RF and high-frequency analog circuits for high-speed Ser Des PHY So Cs — including LNAs, mixers, VCOs, PLL building blocks, and high-speed I/O drivers operating at multi-GHz frequencies Develop impedance-matched RF front-ends for high-speed Ser Des transmitters and receivers, minimizing signal reflections, return loss, and insertion loss across the target frequency range Design on-chip passive structures — transmission lines, baluns, transformers, and inductors — using electromagnetic (EM) simulation to meet RF performance targets Address RF signal integrity challenges — crosstalk, substrate coupling, ground bounce, and power supply noise — in complex mixed-signal So C environments Develop EMI-resilient circuit topologies for automotive Ethernet PHY front-ends that maintain performance under conducted and radiated EMI per automotive standards (CISPR 25, ISO 11452) Perform EM/RF simulation using tools such as Cadence EMX, Keysight ADS, ANSYS HFSS, or Momentum for passive structure characterization and signal integrity analysis Collaborate with analog and digital teams for RF-aware So C integration — managing RF-to-digital isolation, substrate noise coupling, and mixed-signal co-existence Conduct RF characterization and measurement on silicon — S-parameter measurements, noise figure, phase noise, and spurious emission characterization in lab environments Contribute to IP generation, patent filings, and competitive RF innovations for next-generation Ser Des productsRequired Qualifications
Education: B. Tech / M. Tech / Ph. D. in RF Engineering / Microwave Engineering / Electronics / Electrical Engineering Experience: 3–10 years of RFIC or high-frequency analog IC design experience Strong expertise in RF circuit design — LNAs, VCOs, PLLs, mixers, power amplifiers, or high-speed I/O drivers at GHz frequencies Proficiency in RF/EM simulation tools — Cadence Spectre RF, Keysight ADS, ANSYS HFSS, Cadence EMX, or equivalent Deep understanding of impedance matching, S-parameters, noise figure, and RF performance metrics Experience designing on-chip passive components — inductors, transformers, transmission lines — in standard CMOS processes Knowledge of substrate coupling, crosstalk, and EMI mitigation in mixed-signal So C environmentsPreferred / Good-to-Have Skills
Experience designing RF circuits for high-speed Ser Des PHY or wireline applications (>10 GHz) Background in automotive EMC/EMI standards — CISPR 25, ISO 11452, IBIS-AMI modeling Familiarity with mm-wave circuit design (28 GHz, 60 GHz, 77 GHz) for automotive radar adjacency Experience with RF wafer probing and on-silicon characterization (S-parameter, noise figure, phase noise) Knowledge of process design kits (PDK) for RF-optimized CMOS/Si Ge technologies Background in ESD-hardened RF front-end design for automotive environmentsWhat Makes This Role Unique
RF at the Speed Frontier Design RF circuits for >20 Gbps Ser Des — where every GHz matters
Automotive RF Challenge Build EMI-hardened RF front-ends for the world's harshest environments
Full Lifecycle Ownership Circuit design → Silicon characterization → Customer deployment
Cross-Domain Integration Unique intersection of RF, analog, digital & signal processing
Global Automotive Impact RF innovations deployed in automotive safety systems worldwide
Career Differentiation Rare RF expertise applied to cutting-edge automotive semiconductor products
Details
| Company | Texas Instruments |
| Location | Bengaluru, India |
| Type | FULL TIME |
| Niche | tech |
| Experience | permanent |